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Title: Rapid thermal annealing of InAs/GaAs quantum dots under a GaAs proximity cap

Journal Article · · Applied Physics Letter
DOI:https://doi.org/10.1063/1.1412279· OSTI ID:789180

No abstract prepared.

Research Organization:
Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
Sponsoring Organization:
USDOE Director, Office of Science. Office of Basic Energy Studies. Division of Materials Sciences (US)
DOE Contract Number:
AC03-76SF00098
OSTI ID:
789180
Report Number(s):
LBNL-48965; R&D Project: 513340; TRN: AH200137%%378
Journal Information:
Applied Physics Letter, Vol. 79, Issue 16; Other Information: Journal Publication Date: Oct. 15, 2001; PBD: 26 Sep 2001
Country of Publication:
United States
Language:
English

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