Effects of structural defects on the activation of sulfur donors in GaN/x/As/1-x/ formed by N implantation

Conference · Mon Jul 16 04:00:00 EDT 2001

OSTI ID:787171

Jasinski, J ^[1]; Yu, K M; Walukiewicz, W; Liliental-Weber, Z; Washburn, J

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1. LBNL Library

The effects of structural defects on the electrical activity of S doped GaN{sub x}As{sub 1-x} layers formed by S and N coimplantation in GaAs are reported. S and N ions were implanted to the depth of about 0.4 {micro}m. Electrochemical capacitance voltage measurements on samples annealed at 945 C for 10s show that in a thin (<0.1 {micro}m) surface layer the concentration of active shallow donors is almost an order of magnitude larger in S and N co-implanted samples than in samples implanted with S alone. The activation efficiency of S donors also shows a broad minimum at a depth of about 0.2 {micro}m below the surface. The results of these electrical measurements are correlated with the distribution of structural defects revealed by transmission electron microscopy (TEM). The TEM micrographs show that in addition to a band of dislocation loops commonly found in ion implanted GaAs, an additional band of small voids is observed in samples co-implanted with S and N. The location of this band correlates well with the region of reduced electrical activation of S donors, suggesting that formation of the voids through N accumulation results in a lower concentration of active, substitutional N atoms.

• Research Organization: Lawrence Berkeley National Lab., CA (US)
• Sponsoring Organization: USDOE Director, Office of Science. Office of Basic Energy Studies. Division of Materials Sciences (US)
• DOE Contract Number: AC03-76SF00098
• OSTI ID: 787171
• Report Number(s): LBNL--48916
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
CAPACITANCE
CRYSTAL DEFECTS
DISLOCATIONS
DOPED MATERIALS
ELECTRICAL PROPERTIES
GALLIUM ARSENIDES
GALLIUM NITRIDES
ION IMPLANTATION
NITROGEN
SULFUR