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Effect of band anticrossing on the optical transitions in GaAs1-xNx/GaAs multiple quantum wells

Journal Article · Fri Sep 01 04:00:00 EDT 2000 · Physical Review B

OSTI ID:787097

Wu, J ^[1]; Shan, W; Walukiewicz, W; Yu, K M; Ager, III, J W; Haller, E E; Xin, H P; Tu, C W

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Research Organization:: Lawrence Berkeley National Lab., CA (US)

Sponsoring Organization:: USDOE Director, Office of Science. Office of Basic Energy Studies. Division of Materials Sciences (US)

DOE Contract Number:: AC03-76SF00098

OSTI ID:: 787097

Report Number(s):: LBNL--46791

Journal Information:: Physical Review B, Journal Name: Physical Review B Journal Issue: 8 Vol. 64

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
ENERGY GAP
ENERGY-LEVEL TRANSITIONS
GALLIUM ARSENIDES
GALLIUM NITRIDES
OPTICAL PROPERTIES