Novel Drift Structures for Silicon and Compound Semiconductor X-Ray and Gamma-Ray Detectors

Conference · Thu Dec 31 00:00:00 EST 1998

OSTI ID:786696

Patt, Bradley E; Iwanczyk, Jan S

Recently developed silicon- and compound-semiconductor-based drift detector structures have produced excellent performance for charged particles, X rays, and gamma rays and for low-signal visible light detection. The silicon drift detector (SDD) structures that we discuss relate to direct X-ray detectors and scintillation photon detectors coupled with scintillators for gamma rays. Recent designs include several novel features that ensure very low dark current (both bulk silicon dark current and surface dark current) and hence low noise. In addition, application of thin window technology ensures a very high quantum efficiency entrance window on the drift photodetector.

• Research Organization: Photon Imaging, Northridge, CA (US)
• Sponsoring Organization: none (US)
• OSTI ID: 786696
• Report Number(s): ISSN 0003-018X; CODEN TANSAO; ISSN 0003-018X; CODEN TANSAO; TRN: US0109135
• Resource Relation: Conference: 1998 Winter Meeting, Washington, DC (US), 11/15/1998--11/19/1998; Other Information: Transactions of the American Nuclear Society, Vol. 79; PBD: 31 Dec 1998
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
PERFORMANCE
QUANTUM EFFICIENCY
X-RAY DETECTION
GAMMA DETECTION
SI SEMICONDUCTOR DETECTORS
SCINTILLATOR-PHOTODIODE DETECTORS