Radiation Tolerance Studies of BTeV Pixel Readout Chip Prototypes

Conference · Tue Sep 11 00:00:00 EDT 2001

OSTI ID:786172

Chiodini, Gabriele

We report on several irradiation studies performed on BTeV preFPIX2 pixel readout chip prototypes exposed to a 200 MeV proton beam at the Indiana University Cyclotron Facility. The preFPIX2 pixel readout chip has been implemented in standard 0.25 micron CMOS technology following radiation tolerant design rules. The tests confirmed the radiation tolerance of the chip design to proton total dose of 26 MRad. In addition, non destructive radiation-induced single event upsets have been observed in on-chip static registers and the single bit upset cross section has been measured.

• Research Organization: Fermi National Accelerator Lab. (FNAL), Batavia, IL (United States)
• Sponsoring Organization: USDOE Office of Energy Research (ER) (US)
• DOE Contract Number: AC02-76CH03000
• OSTI ID: 786172
• Report Number(s): FERMILAB-Conf-01/214-E; TRN: US0108828
• Resource Relation: Conference: 7th Workshop on Electronics for LHC Experiments, Stockholm (SE), 09/10/2001--09/14/2001; Other Information: PBD: 11 Sep 2001
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
43 PARTICLE ACCELERATORS
MICROELECTRONIC CIRCUITS
DESIGN
IRRADIATION
IU CYCLOTRON
PROTON BEAMS
READOUT SYSTEMS
RADIATION EFFECTS