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U.S. Department of Energy
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Photonics Integration Devices and Technologies

Technical Report ·
DOI:https://doi.org/10.2172/780313· OSTI ID:780313

We have used selective AlGaAs oxidation, dry-etching, and high-gain semiconductor laser simulation to create new in-plane lasers with interconnecting passive waveguides for use in high-density photonic circuits and future integration of photonics with electronics. Selective oxidation and doping of semiconductor heterostructures have made vertical cavity surface emitting lasers (VCSELs) into the world's most efficient low-power lasers. We apply oxidation technology to improve edge-emitting lasers and photonic-crystal waveguides, making them suitable for monolithic integrated microsystems. Two types of lasers are investigated: (1) a ridge laser with resonant coupling to an output waveguide; (2) a selectively-oxidized laser with a low active volume and potentially sub-milliAmp threshold current. Emphasis is on development of high-performance lasers suited for monolithic integration with photonic circuit elements.

Research Organization:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Organization:
US Department of Energy (US)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
780313
Report Number(s):
SAND2001-0897
Country of Publication:
United States
Language:
English

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