Defect and dopant diffusion in ion implanted silcon: an atomic scale simulation approach
Conference
·
OSTI ID:7704
- LLNL
We present an atomistic approach to the development of predictive process simulation tools. First principles methods are used to construct a database of defect and dopant energetics. This is used as input for kinetic Monte Carlo simulations of ion implantation and dopant diffusion under a wide variety of technologically relevant conditions. Our simulations are in excellent agreement with annealing experiments on 20-80 keV B implants into Si, and with those on 50 keV Si implants into complex B-doped structures. Our calculations produce novel predictions of the time evolution of the electrically active B fraction during annealing.
- Research Organization:
- Lawrence Livermore National Laboratory (LLNL), Livermore, CA
- Sponsoring Organization:
- USDOE Office of Energy Research (ER)
- DOE Contract Number:
- W-7405-ENG-48
- OSTI ID:
- 7704
- Report Number(s):
- UCRL-JC-132377; KC0202020; ON: DE00007704
- Country of Publication:
- United States
- Language:
- English
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