OMVPE Growth of Metastable GaAsSb and GaInAsSb Alloys Using TBAs and TBDMSb

Technical Report · Tue Oct 01 04:00:00 EDT 1996

DOI:https://doi.org/10.2172/766960· OSTI ID:766960

Charache, G. ^[1]; Shin, J. ^[2]; Hsu, T. C. ^[2]; Hsu, Y. ^[2]; Stringfellow, G. B. ^[2]

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1. Knolls Atomic Power Laboratory (KAPL), Niskayuna, NY (United States)
2. Univ. of Utah, Salt Lake City, UT (United States)

Epitaxial layers of the metastable alloys GaAsSb and GaInAsSb have been grown by organometallic vapor phase epitaxy (OMVPE) using tertiarybutylarsine (TBAs) and tertiarybutyldimethylantimony (TBDMSb) with conventional group III sources. Layers with compositions well inside the miscibility gap were successfully obtained. The key parameters for obtaining these metastable alloys are the use of low V/III ratios (≤ 1) and low growth temperatures. The Sb distribution coefficients for GaAsSb are close to unity on both GaSb and InAs substrates when V/III ratios of approximately unity are used. The distribution coefficients of Sb for GaInAsSb on GaSb and InAs substrates are slightly higher than unity for lower V/III ratios. The quality of the surface morphology is degraded as the composition moves further into the region of solid immiscibility. The hole concentrations of undoped GaInAsSb layers on GaAs substrates grown using conditions identical to those used for the InAs substrates are approximately 1 x 10¹⁷ cm^-3 at room temperature. The concentrations of In and Sb in the GaInAsSb layers were 0.05-0.23 and 0.75-0.95, respectively, on GaSb substrates and 0.23-0.39 and 0.82-0.89, respectively, on InAs substrates. These compositions correspond to bandgap energies of 0.4-0.7 eV. Low temperature photolurninescence (PL) spectra were observed for GaInAsSb layers grown on GaSb and InAs substrates at wavelengths of approximately 1.9 and 2.0 μm with half-widths of 20 and 25.3 meV, respectively.

• Research Organization: Knolls Atomic Power Laboratory (KAPL), Niskayuna, NY (United States)
• Sponsoring Organization: USDOE
• DOE Contract Number: AC12-76SN00052
• OSTI ID: 766960
• Report Number(s): KAPL-P-000232
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
37 INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY