Luminescence properties of GaN and Al{sub 0.14}Ga{sub 0.86}N/GaN superlattice doped with europium
- LBNL Library
No abstract prepared.
- Research Organization:
- Lawrence Berkeley National Lab., CA (US)
- Sponsoring Organization:
- USDOE Director, Office of Science (US)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 765500
- Report Number(s):
- LBNL--46792
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 6 Vol. 77; ISSN 0003-6951; ISSN APPLAB
- Country of Publication:
- United States
- Language:
- English
Similar Records
Microstructural evidence on electrical properties of Ta/Ti/Al and Ti/Ta/Al ohmic contacts to n-AlGaN/GaN
Microstructural evidence on electrical properties of Ta/Ti/Al and Ti/Ta/Al ohmic contacts to n-AlGaN/GaN
Unusual luminescence lines in GaN
Journal Article
·
Mon Aug 27 00:00:00 EDT 2001
· Applied Physics Letters
·
OSTI ID:786993
Microstructural evidence on electrical properties of Ta/Ti/Al and Ti/Ta/Al ohmic contacts to n-AlGaN/GaN
Journal Article
·
Mon Aug 27 00:00:00 EDT 2001
· Applied Physics Letters
·
OSTI ID:787136
Unusual luminescence lines in GaN
Journal Article
·
Thu Jul 08 00:00:00 EDT 2004
· Journal of Applied Physics
·
OSTI ID:842263