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Luminescence of Tb ions implanted into amorphous AlN thin films grown by sputtering

Journal Article · Fri Mar 31 23:00:00 EST 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.126652· OSTI ID:765477

Jadwisienczak, W M ^[1]; Lozykowski, H J; Perjeru, F; Chen, H; Kordesch, M; Brown, I G

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Research Organization:: Lawrence Berkeley National Lab., CA (US)

Sponsoring Organization:: USDOE Director, Office of Science (US)

DOE Contract Number:: AC03-76SF00098

OSTI ID:: 765477

Report Number(s):: LBNL--45425

Journal Information:: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 23 Vol. 76; ISSN APPLAB; ISSN 0003-6951

Country of Publication:: United States

Language:: English

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Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
ION IMPLANTATION
LUMINESCENCE
TERBIUM IONS