Anion Photoelectron Spectroscopy of Semiconductor Clusters
- Univ. of California, Berkeley, CA (United States)
Semiconductor and related clusters are studied by anion photoelectron spectroscopy. Vibrationally-resolved photoelectron spectra of carbon (C4-, C6-, and C8-) and silicon (Si3- - Si7-) clusters were measured at various photodetachment wavelengths. Electron affinities, term energies, and vibrational frequencies for the ground and excited electronic states of the neutral clusters have been obtained. The assignments of excited electronic states were aided by ab initio calculations, as well as measurements of photoelectron angular distributions. Besides clusters of pure elements, mixed group III-V clusters are also investigated. Small indium phosphide clusters having 2-8 atoms are studied using anion photoelectron spectroscopy of InxPy- (x,y=1-4). Both ground and low-lying electronic states of the neutral clusters are observed. Electron affinities a re determined from the spectra. An electronic gap is shown in the even cluster anion spectra. Other related clusters, SinH (n=2-4) and PO2 were also studied. The electron affinities and ground state vibrational frequencies are obtained from the spectral assignments, aided by ab initio calculations and photoelectron angular distributions. The anion geometry of PO2 is also obtained from Franck-Condon analysis.
- Research Organization:
- Lawrence Berkeley National Lab. (LBNL), Berkeley, CA (United States)
- Sponsoring Organization:
- USDOE Office of Science (SC)
- DOE Contract Number:
- AC03-76SF00098
- OSTI ID:
- 764710
- Report Number(s):
- LBNL-41308; NSF DMR-9521805; NSF DMR-9521805; TRN: AH200124%%104
- Resource Relation:
- Other Information: TH: Thesis; No thesis information supplied; PBD: 12 Dec 1997
- Country of Publication:
- United States
- Language:
- English
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