Photoelectron spectroscopy of Si{sub n}H{sup {minus}} (n=2{endash}4) anions

Journal Article · Fri May 01 04:00:00 EDT 1998 · Journal of Chemical Physics

DOI:https://doi.org/10.1063/1.476200· OSTI ID:627745

Xu, C; Taylor, T R; Burton, G R; Neumark, D M ^[1]

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1. Department of Chemistry, University of California, Berkeley, California94720

Vibrationally resolved photoelectron spectra of Si{sub n}H{sup {minus}} (n=2{endash}4) have been measured at a photodetachment wavelength of 355 nm (3.493 eV). The electron affinities of Si{sub 2}H, Si{sub 3}H, and Si{sub 4}H are 2.31{plus_minus}0.01, 2.53{plus_minus}0.01, and 2.68{plus_minus}0.01eV, respectively. Vibrational frequencies for the neutral ground states and a low-lying state of Si{sub 2}H are also determined. Assignment of the electronic states and vibrational frequencies is facilitated by comparison with {ital ab initio} calculations. The calculations show that the H atom in Si{sub 4}H and Si{sub 4}H{sup {minus}} is bonded to a single Si atom, in contrast to the bridged structures found for the smaller clusters. These calculations, along with photoelectron energy and angular distributions, yield a definitive assignment of the ground and nearly degenerate first excited states of Si{sub 2}H. {copyright} {ital 1998 American Institute of Physics.}

• OSTI ID: 627745
• Journal Information: Journal of Chemical Physics, Journal Name: Journal of Chemical Physics Journal Issue: 18 Vol. 108; ISSN JCPSA6; ISSN 0021-9606
• Country of Publication: United States
• Language: English

Related Subjects

66 PHYSICS
AFFINITY
ANIONS
ELECTRON DETACHMENT
ELECTRONEGATIVITY
ELECTRONIC STRUCTURE
EXCITED STATES
PHOTOELECTRON SPECTROSCOPY
SILANES
VIBRATIONAL STATES