Skip to main content
OSTI.GOVU.S. Department of Energy Office of Scientific and Technical Information
U.S. Department of Energy
Office of Scientific and Technical Information
 

Longevity Improvement of Optically Activated, High Gain GaAs Photoconductive Semiconductor Switches

Conference ·
OSTI ID:760787
 [1]; ; ; ; ; ; ; ; ;
  1. Sandia National Laboratories
+ Show Author Affiliations

No abstract prepared.

Research Organization:
Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
Sponsoring Organization:
US Department of Energy (US)
DOE Contract Number:
AC04-94AL85000
OSTI ID:
760787
Report Number(s):
SAND2000-1545C
Country of Publication:
United States
Language:
English

Similar Records

Longevity improvement of optically activated, high gain GaAs photoconductive semiconductor switches
Conference · Wed Mar 01 23:00:00 EST 2000 · OSTI ID:752172
Longevity of optically activated, high gain GaAs photoconductive semiconductor switches
Conference · Fri Aug 01 00:00:00 EDT 1997 · OSTI ID:508103
High gain GaAs photoconductive semiconductor switches: Switch longevity
Conference · Wed Jul 01 00:00:00 EDT 1998 · OSTI ID:663222

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ACTIVATION DETECTORS
PHOTOCONDUCTIVITY
SEMICONDUCTOR SWITCHES