Longevity improvement of optically activated, high gain GaAs photoconductive semiconductor switches

Conference · Thu Mar 02 04:00:00 EST 2000

OSTI ID:752172

MAR, ALAN ^[1]; LOUBRIEL, GUILLERMO M; ZUTAVERN, FRED J; O'MALLEY, MARTIN W; HELGESON, WESLEY D; BROWN, DARWIN JAMES; HJALMARSON, HAROLD P; BACA, ALBERT G

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1. Sandia National Laboratories

The longevity of high gain GaAs photoconductive semiconductor switches (PCSS) has been extended to over 100 million pulses at 23A, and over 100 pulses at 1kA. This is achieved by improving the ohmic contacts by doping the semi-insulating GaAs underneath the metal, and by achieving a more uniform distribution of contact wear across the entire switch by distributing the trigger light to form multiple filaments. This paper will compare various approaches to doping the contacts, including ion implantation, thermal diffusion, and epitaxial growth. The device characterization also includes examination of the filament behavior using open-shutter, infra-red imaging during high gain switching. These techniques provide information on the filament carrier densities as well as the influence that the different contact structures and trigger light distributions have on the distribution of the current in the devices. This information is guiding the continuing refinement of contact structures and geometries for further improvements in switch longevity.

• Research Organization: Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 752172
• Report Number(s): SAND2000-0549C
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
CRYSTAL DOPING
ELECTRIC CONTACTS
GALLIUM ARSENIDES
PHOTOCONDUCTIVITY
SEMICONDUCTOR SWITCHES
SERVICE LIFE