Skip to main content

Mass Transport in the Exitaxial Lateral Overgrowth of Gallium Nitride

Journal Article · Mon Jul 17 00:00:00 EDT 2000 · Journal of Crystal Growth

OSTI ID:759990

WILLAN, CHRISTINE C ^[1]; COLTRIN, MICHAEL E; HAN, JUNG

Sandia National Laboratories

No abstract prepared.

View Journal Article

Print

Research Organization:: Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)

Sponsoring Organization:: US Department of Energy (US)

DOE Contract Number:: AC04-94AL85000

OSTI ID:: 759990

Report Number(s):: SAND2000-1904J

Journal Information:: Journal of Crystal Growth, Journal Name: Journal of Crystal Growth

Country of Publication:: United States

Language:: English

Similar Records

Kinetics and Transport in Gallium Nitride Epitaxial Lateral Overgrowth

Conference · Tue Jan 09 23:00:00 EST 2001 · OSTI ID:784034

Kinetics and Transport in Gallium Nitride Epitaxial Lateral Overgrowth

Conference · Wed Jan 10 23:00:00 EST 2001 · OSTI ID:784035

Photoemission spectromicroscopy studies on epitaxial lateral overgrowth GaN surfaces

Journal Article · Thu Jul 01 00:00:00 EDT 1999 · Journal of Vacuum Science and Technology B: Microelect. & Nanometer Structures · OSTI ID:800259

Related Subjects

36 MATERIALS SCIENCE
CRYSTAL GROWTH
EPITAXY
GALLIUM NITRIDES
MASS TRANSFER