Retention and Switching Kinetics of Protonated Gate Field Effect Transistors

Journal Article · Tue Jun 27 00:00:00 EDT 2000 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.1287126· OSTI ID:759877

DEVINE, R A.B. ^[1]; HERRERA, GILBERT V

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1. Sandia National Laboratories

The switching and memory retention time has been measured in 50 {micro}m gatelength pseudo-non-volatile memory MOSFETs containing, protonated 40 nm gate oxides. Times of the order of 3.3 seconds are observed for fields of 3 MV cm{sup {minus}1}. The retention time with protons placed either at the gate oxide/substrate or gate oxide/gate electrode interfaces is found to better than 96% after 5,000 seconds. Measurement of the time dependence of the source-drain current during switching provides clear evidence for the presence of dispersive proton transport through the gate oxide.

• Research Organization: Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 759877
• Report Number(s): SAND2000-1564J
• Journal Information: Journal of Applied Physics, Journal Name: Journal of Applied Physics
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
KINETICS
MOSFET
PROTON TRANSPORT
SWITCHING CIRCUITS
TIME DEPENDENCE