Retention and switching kinetics of protonated gate field effect transistors

Journal Article · Tue May 23 00:00:00 EDT 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1311608· OSTI ID:755619

DEVINE, R A.B. ^[1]; HERRERA, GILBERT V

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1. Sandia National Laboratories

The switching and memory retention time has been measured in 50 {micro}m gatelength pseudo-non-volatile memory MOSFETS containing, protonated 40 nm gate oxides. Times of the order of 3.3 seconds are observed for fields of 3 MV cm{sup {minus}1}. The retention time with protons placed either at the gate oxide/substrate or gate oxide/gate electrode interfaces is found to better than 96{percent} after 5,000 seconds. Measurement of the time dependence of the source-drain current during switching provides clear evidence for the presence of dispersive proton transport through the gate oxide.

• Research Organization: Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 755619
• Report Number(s): SAND2000-1307J
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
MEASURING METHODS
MOSFET
PERFORMANCE TESTING
SEMICONDUCTOR STORAGE DEVICES
SWITCHING CIRCUITS