Diffusional kinetics of SiGe Dimers on Si(100) using atom-tracking scanning tunneling microscopy
Journal Article
·
· Physical Review Letters
- Sandia National Laboratories
Quantitative measurements of the diffusion of adsorbed mixed Ge-Si dimers on the Si(100) surface have been made as a function of temperature using atom-tracking scanning tunneling microscopy. These mixed dimers are distinguishable from pure Si-Si dimers by their characteristic kinetics--a 180-degree rotation between two highly buckled configurations. At temperatures at which the mixed dimers diffuse, atomic-exchange events occur, in which the Ge atom in the adsorbed dimer exchanges with a substrate Si atom. Re-exchange can also occur when the diffusing Si-Si dimer revisits the original site of exchange.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 759871
- Report Number(s):
- SAND2000-1510J
- Journal Information:
- Physical Review Letters, Journal Name: Physical Review Letters
- Country of Publication:
- United States
- Language:
- English
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