Nanofabricated SiO{sub 2}-Si-SiO{sub 2} Resonant Tunneling Diodes
Conference
·
OSTI ID:753458
- Sandia National Laboratories
Resonance Tunneling Diodes (RTDs) are devices that can demonstrate very high-speed operation. Typically they have been fabricated using epitaxial techniques and materials not consistent with standard commercial integrated circuits. The authors report here the first demonstration of SiO{sub 2}-Si-SiO{sub 2} RTDs. These new structures were fabricated using novel combinations of silicon integrated circuit processes.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 753458
- Report Number(s):
- SAND2000-0854C
- Country of Publication:
- United States
- Language:
- English
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