Observing the semiconducting band-gap alignment of MoS{sub 2} layers of different atomic thicknesses using a MoS{sub 2}/SiO{sub 2}/Si heterojunction tunnel diode

Journal Article · Mon Aug 03 04:00:00 EDT 2015 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.4927529· OSTI ID:22489059

Nishiguchi, Katsuhiko; Yamaguchi, Hiroshi; Fujiwara, Akira ^[1]; Castellanos-Gomez, Andres; Steele, Gary A. ^[2]

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1. NTT Basic Research Laboratories, 3-1 Morinosato Wakamiya, Atsugi, Kanagawa 243-0198 (Japan)
2. Kavli Institute of Nanoscience, Delft University of Technology, Lorentzweg 1, 2628CJ Delft (Netherlands)

We demonstrate a tunnel diode composed of a vertical MoS{sub 2}/SiO{sub 2}/Si heterostructure. A MoS{sub 2} flake consisting four areas of different thicknesses functions as a gate terminal of a silicon field-effect transistor. A thin gate oxide allows tunneling current to flow between the n-type MoS{sub 2} layers and p-type Si channel. The tunneling-current characteristics show multiple negative differential resistance features, which we interpret as an indication of different conduction-band alignments of the MoS{sub 2} layers of different thicknesses. The presented tunnel device can be also used as a hybrid-heterostructure device combining the advantages of two-dimensional materials with those of silicon transistors.

• OSTI ID: 22489059
• Journal Information: Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 5 Vol. 107; ISSN APPLAB; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
CURRENTS
FIELD EFFECT TRANSISTORS
HETEROJUNCTIONS
LAYERS
MOLYBDENUM SULFIDES
SILICON
SILICON OXIDES
THICKNESS
TUNNEL DIODES
TUNNEL EFFECT
TWO-DIMENSIONAL SYSTEMS