Agile dry etching of compound semiconductors for science-based manufacturing using in-situ process control
- Sandia National Laboratories
In-situ optical diagnostics and ion beam diagnostics for plasma-etch and reactive-ion-beam etch (RIBE) tools have been developed and implemented on etch tools in the Compound Semiconductor Research Laboratory (CSRL). The optical diagnostics provide real-time end-point detection during plasma etching of complex thin-film layered structures that require precision etching to stop on a particular layer in the structure. The Monoetch real-time display and analysis program developed with this LDRD displays raw and filtered reflectance signals that enable an etch system operator to stop an etch at the desired depth within the desired layer. The ion beam diagnostics developed with this LDRD will permit routine analysis of critical ion-beam profile characteristics that determine etch uniformity and reproducibility on the RIBE tool.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 751581
- Report Number(s):
- SAND2000-0152
- Country of Publication:
- United States
- Language:
- English
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