DC characteristics of OMVPE-grown N-p-n InGaP/InGaAsN DHBTs

Journal Article · Mon Jan 03 23:00:00 EST 2000

OSTI ID:750188

Li, N Y ^[1]; Chang, P C; Baca, A G; Xie, X M; Sharps, P R; Hou, H Q

---

1. Sandia National Laboratories

The authors demonstrate, for the first time, a functional N-p-n heterojunction bipolar transistor using a novel material, InGaAsN, with a bandgap energy of 1.2eV as the p-type base layer. A 300{angstrom}-thick In{sub x}Ga{sub 1-x}As graded layer was introduced to reduce the conduction band offset at the p-type InGaAsN base and n-type GaAs collector junction. For an emitter size of 500 {mu}m{sup 2}, a peak current gain of 5.3 has been achieved.

• Research Organization: Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
• Sponsoring Organization: US Department of Energy (US)
• DOE Contract Number: AC04-94AL85000
• OSTI ID: 750188
• Report Number(s): SAND2000-0059J
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
ELECTRIC CURRENTS
ELECTRICAL PROPERTIES
GALLIUM ARSENIDES
GALLIUM NITRIDES
HETEROJUNCTIONS
INDIUM ARSENIDES
INDIUM NITRIDES
JUNCTION TRANSISTORS