GaN pnp bipolar junction transistors operated to 250 C
- Sandia National Laboratories
The authors report on the dc performance of the first GaN pnp bipolar junction transistor. The structure was grown by MOCVD on c-plane sapphire substrates and mesas formed by low damage Inductively Coupled Plasma etching with a Cl{sub 2}/Ar chemistry. The dc characteristics were measured up to V{sub BC} of 65 V in common base mode and at temperatures up to 250 C. Under all conditions, I{sub C} {approximately} I{sub E}, indicating higher emitter injection efficiency. The offset voltage was {le} 2 V and devices were operated up to power densities of 40kW{center{underscore}dot}cm{sup {minus}2}.
- Research Organization:
- Sandia National Labs., Albuquerque, NM (US); Sandia National Labs., Livermore, CA (US)
- Sponsoring Organization:
- US Department of Energy (US)
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 750184
- Report Number(s):
- SAND2000-0019J
- Country of Publication:
- United States
- Language:
- English
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