Critical epitaxial thicknesses for low-temperature (20--100 [degree]C) Ge(001)2[times]1 growth by molecular-beam epitaxy
Journal Article
·
· Journal of Applied Physics; (United States)
- Materials Research Laboratory, Coordinated Science Laboratory, and Department of Materials Science, University of Illinois, 1101 West Springfield Avenue, Urbana, Illinois 61801 (United States)
The growth of Ge(001) by molecular-beam epitaxy at temperatures [ital T][sub [ital s]] between 20 and 100 [degree]C, and deposition rates of 0.5 and 1 A s[sup [minus]1], was investigated using a combination of [ital in] [ital situ] reflection high-energy electron diffraction and post-deposition cross-sectional transmission electron microscopy. All films consisted of three zones beginning with a defect-free epitaxial layer of thickness [ital t][sub 1] in which ln([ital t][sub 1])[proportional to](1/[ital T][sub [ital s]]). The second zone was a narrower intermediate layer containing [l brace]111[r brace] stacking faults and microtwins, while the third zone was amorphous. An atomistic growth model is proposed to explain the observed morphological breakdown during low-temperature growth.
- DOE Contract Number:
- FG02-91ER45439
- OSTI ID:
- 7368868
- Journal Information:
- Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 74:4; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
36 MATERIALS SCIENCE
360602* -- Other Materials-- Structure & Phase Studies
665000 -- Physics of Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFRACTION
DIMENSIONS
ELECTRON DIFFRACTION
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
GERMANIUM
METALS
MICROSCOPY
MOLECULAR BEAM EPITAXY
MORPHOLOGY
SCATTERING
STACKING FAULTS
TEMPERATURE RANGE
TEMPERATURE RANGE 0273-0400 K
THICKNESS
TWINNING
360602* -- Other Materials-- Structure & Phase Studies
665000 -- Physics of Condensed Matter-- (1992-)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFRACTION
DIMENSIONS
ELECTRON DIFFRACTION
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
GERMANIUM
METALS
MICROSCOPY
MOLECULAR BEAM EPITAXY
MORPHOLOGY
SCATTERING
STACKING FAULTS
TEMPERATURE RANGE
TEMPERATURE RANGE 0273-0400 K
THICKNESS
TWINNING