Interaction of aluminum layers with polycrystalline silicon

Journal Article · Wed Jan 01 04:00:00 EST 1975 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.321530· OSTI ID:7366707

Nakamura, K; Nicolet, M A; Mayer, J W; Blattner, R J; Evans, Jr, C A

Auger electron spectroscopy, MeV /sup 4/He/sup +/ backscattering spectrometry, and scanning electron microscopy were used to investigate interactions between Al films and polycrystalline layers of chemical vapor deposited Si on SiO/sub 2/. Depth profiling techniques showed that intermixing of the Al and Si occurred in 400--560/sup 0/ t. Dissolution of the polycrystalline Si into the Al film occurs followed by nucleation and growth of Si crystallites in the Al film. The morphology of the final structure depends on the relative thicknesses of the as-deposited Al and Si layers. For Al layers thinner than those of the Si, a nearly continuous film is formed on the outer surface. The thickness of this final Si film is approximately that of the original Al layer. The remaining Si and the Al form a two-phase layer between the outer Si film and the SiO/sub 2/ substrate. (WDM)

• Research Organization: California Inst. of Tech., Pasadena
• OSTI ID: 7366707
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 46:11; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

14 SOLAR ENERGY
140501* -- Solar Energy Conversion-- Photovoltaic Conversion
36 MATERIALS SCIENCE
360104 -- Metals & Alloys-- Physical Properties
ALUMINIUM
AUGER ELECTRON SPECTROSCOPY
CRYSTAL GROWTH
DIMENSIONS
ELECTRON SPECTROSCOPY
ELEMENTS
FILMS
LAYERS
METALS
SEMIMETALS
SILICON
SPECTROSCOPY
THICKNESS