Growth of polycrystalline silicon at low temperature on hydrogenated microcrystalline silicon ({mu}c-Si:H) seed layer
High quality polycrystalline silicon (poly-Si) films were deposited on SiO{sub 2} substrate using hydrogenated microcrystalline silicon ({micro}c-Si:H) seed layer by very high frequency (182.5MHz) sputtering system and Chemical Vapor Deposition (CVD) system in pure Ar ambient at a temperature of 300 C. In this study, the authors investigated the correlation between the initial seed layer conditions and the grown layer, and studied the nucleation process. Electrical characteristics and surface roughness of the grown layer as a function of film thickness and deposition rate will be shown. Grown layers were deposited on several kinds of hydrogenated seed layers in pure Ar ambient. The resistivity and Hall mobility of the grown layer are 0.33 {Omega}{center_dot}cm and 7.5cm{sup 2}/V{center_dot}sec respectively for a film with thickness of 3,000 {angstrom}. In this measurement, they found that the resistivity is lower as deposition rate is slower, and when deposition rate is relatively high, the resistivity increases with thickness. On the contrary, in the case of low deposition rate, resistivity decreases as film thickness increases. For the deposition rate of 0.32 {angstrom}/sec, the surface roughness ranges over 1.39 {angstrom}--8.52 {angstrom}. This is a very smooth surface compared to hydrogenated polycrystalline silicon films. The resistivity of grown layer dramatically decreases in proportion to that of the seed layer. From Reflection High Energy Electron Diffraction (RHEED) patterns, it is clearly shown that the film is crystallization of occurred in the earlier stage than that of conventional deposited film. Their results shows that the electrical characteristics of the films are affected by the conditions of the seed layer and the deposition rate. Consequently, they conclude that the initial conditions are very important for the crystal growth of the as-deposition poly-Si.
- Research Organization:
- Tohoku Univ., Aramaki, Sendai (JP)
- OSTI ID:
- 20085512
- Resource Relation:
- Conference: Amorphous and Microcrystalline Silicon Technology - 1997, San Francisco, CA (US), 03/31/1997--04/04/1997; Other Information: PBD: 1997; Related Information: In: Amorphous and microcrystalline silicon technology--1997. Materials Research Society symposium proceedings, Volume 467, by Wagner, S.; Hack, M.; Schiff, E.A.; Schropp, R.; Shimizu, I. [eds.], 999 pages.
- Country of Publication:
- United States
- Language:
- English
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