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Depth distribution and migration of helium in vanadium at elevated temperatures

Conference ·
OSTI ID:7353406
The depth profiles and retention behavior of /sup 4/He implanted at 80 keV into vanadium have been investigated in cold rolled bulk and foil samples. The specimens were implanted at temperatures of 100, 400, and 800/sup 0/C and at fluences up to 1 x 10/sup 18/ He/cm/sup 2/. Helium depth distributions were found to be Gaussian for the 100/sup 0/C implants but exhibited a double peak appearance for some of the highest fluence 400 and 800/sup 0/C implants. In polished samples blistering and flaking occurred at both 100 and 400/sup 0/C implant temperatures for fluences greater than 5 x 10/sup 17/ He/cm/sup 2/, but little of the implanted helium appeared to have been released as a result of the exfoliation. Conversely, most of the implanted helium was released from 800/sup 0/C implant areas though no significant blistering or surface perforation was observed. Blistering was observed to occur only on polished samples, though the release behavior was similar to that of the unpolished specimens on which no blistering was observed at any temperature or fluence. The surface condition of samples polished by different techniques was found to exert an influence on the temperature dependence of release and on the character of the blister topography.
Research Organization:
Sandia Labs., Albuquerque, N.Mex. (USA)
DOE Contract Number:
AT(29-1)-789
OSTI ID:
7353406
Report Number(s):
SAND-75-6189; CONF-760209-28
Country of Publication:
United States
Language:
English