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Exact finite-range coupled-channels Born approximation analysis of /sup 13/C-induced reactions

Journal Article · · Phys. Rev., C; (United States)
Different descriptions of the reaction /sup 28/Si(/sup 13/C, /sup 12/C)/sup 29/Si at 36 MeV leading to the ground and first excited states of /sup 29/Si are examined. Sensitivity of the reaction cross section to various families of optical parameters is investigated and the so-called ''surface transparent potential'' is used as an alternate treatment. Exact finite range distorted-wave Born approximation and coupled-channels Born approximation analyses of the reaction are performed, showing that the coupled-channels Born approximation analysis, even in its presently restricted form, leads to an improvement over the distorted-wave Born approximation predictions. (AIP)
Research Organization:
Department of Physics, University of Texas, Austin, Texas 78712
OSTI ID:
7352398
Journal Information:
Phys. Rev., C; (United States), Journal Name: Phys. Rev., C; (United States) Vol. 13:6; ISSN PRVCA
Country of Publication:
United States
Language:
English