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Observation of normal-metal phonons with proximity-effect tunneling

Journal Article · · Phys. Rev. Lett.; (United States)

We have measured the tunneling characteristics (dV/dI and d/sup 2/V/dI/sup 2/ versus V) of thin film junctions of the form Al-I-M-Pb, where M is Ag, Cu, or Al. These tunneling characteristics have dips at voltages correspondng to peaks in the phonon density of states of M and peaks at voltages corresponding to the peaks in the phonon density of states of Pb. From the amplitude of the dips due to the phonons of M we can crudely estimate the electron-phonon coupling constant lambda/subM/ for Al and Cu. (AIP)

Research Organization:
Department of Physics, University of California, Los Angeles, California 90024
OSTI ID:
7347955
Journal Information:
Phys. Rev. Lett.; (United States), Journal Name: Phys. Rev. Lett.; (United States) Vol. 36:26; ISSN PRLTA
Country of Publication:
United States
Language:
English