Tunneling characteristics of thin epitaxial Bi-film--SiO/sub 2/--Pb junctions

Journal Article · Sat May 01 00:00:00 EDT 1976 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.322900· OSTI ID:7192581

Asahi, H; Kinbara, A

The tunneling characteristics in thin epitaxial Bi films (thickness: 400--1200 A) were investigated. Bi--SiO/sub 2/--Pb tunnel junctions were prepared by vacuum deposition onto freshly cleaved mica substrates in an ultrahigh vacuum system. The dI/dV--V curve has a large peak at the Bi positive voltage range (150--250 mV) which can be attributed to the band structure of Bi. In the low-voltage range (less than or equal to 25 mV), d/sup 2/I/dV/sup 2/-V curves show the peaks or dips reflecting the state density of superconducting lead. The phonon-assisted tunneling peaks or dips in the normal state were also observed. For medium voltage range (greater than or equal to 25 mV), there are several peaks or dips due to phonons of SiO/sub 2/. The subband edges generated by quantum size effects were not observed, probably because the electron bands and the hole band of Bi overlap each other, located at the L and T points in the Brillouin zone, respectively. (AIP)

• Research Organization: Department of Applied Physics, University of Tokyo, Bunkyo-ku, Tokyo, Japan
• OSTI ID: 7192581
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 47:5; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

656102* -- Solid State Physics-- Superconductivity-- Acoustic
Electronic
Magnetic
Optical
& Thermal Phenomena-- (-1987)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BISMUTH
BRILLOUIN ZONES
CHALCOGENIDES
ELEMENTS
ENERGY-LEVEL DENSITY
FILMS
LEAD
METALS
OXIDES
OXYGEN COMPOUNDS
PHONONS
QUASI PARTICLES
SILICON COMPOUNDS
SILICON OXIDES
SUPERCONDUCTING JUNCTIONS
TUNNEL EFFECT
ZONES