Electrical conduction mechanisms in thick film resistors. [Ruthenium-based resistors]

Conference · Thu Jan 01 04:00:00 EST 1976

OSTI ID:7347739

Pike, G E; Seager, C H

The structural and electrical transport characteristics of several ruthenium based, thick film resistor systems were studied for the purpose of determining the dominant electrical conduction mechanism(s). This study included one custom and three commercially formulated systems with resistivities from 10/sup 2/ to 10/sup 6/ ..cap omega../ square. To analyze the thick film microstructure, we have used scanning electron microscopy, electron microprobe analysis, and x-ray diffraction. Within a glass matrix we find a three-dimensional network of connected metal oxide particles which have the pyrochlore structure. For the electrical transport properties we have made many different types of measurements. However, in this paper we shall mainly discuss only two: the temperature dependence from 1.2 to 400/sup 0/K and the electric field dependence from 0 to 30 kV/cm of thick film conductance. Although the chemistry of these resistor systems is varied and complex, we find that their electrical properties are remarkably similar in many respects. As a function of temperature all resistors studied show a broad conductance maximum at several hundred degrees K and a pronounced conductance decrease at and below 4/sup 0/K. At low electric fields (E less than 0.1 kV/cm) there is a field dependence of the conductance which is quite sharp at approximately 4 K and which nearly vanishes above 300/sup 0/K . At higher fields the conductance increases substantially at all temperatures (pulse techniques were used to avoid heating). Our results are compared to the predictions of several previous conduction models. We interpret our results in terms of a model in which tunneling between metal oxide particles is shown to play an important role.

• Research Organization: Sandia Labs., Albuquerque, N.Mex. (USA)
• DOE Contract Number: AT(29-1)-789
• OSTI ID: 7347739
• Report Number(s): SAND-76-5329; CONF-761004-1
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
420800* -- Engineering-- Electronic Circuits & Devices-- (-1989)
CHEMICAL ANALYSIS
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
ELECTRICAL EQUIPMENT
ELECTRICAL PROPERTIES
ELECTRON MICROPROBE ANALYSIS
ELECTRON MICROSCOPY
ELEMENTS
EQUIPMENT
METALS
MICROANALYSIS
MICROSCOPY
PHYSICAL PROPERTIES
PLATINUM METALS
REFRACTORY METALS
RESISTORS
RUTHENIUM
TEMPERATURE DEPENDENCE
TRANSITION ELEMENTS