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Itinerant f-electron antiferromagnetism in NpSn/sub 3/

Journal Article · · Phys. Rev. Lett.; (United States)
We report measurements of the specific heat, Moessbauer effect, and electrical resistivity of NpSn/sub 3/, which identify its weak antiferromagnetism (T/sub N/=9.5 K) as arising from itinerant 5f electrons. This is the first known verification of itinerant f-electron antiferromagnetism in any system. (AIP)
Research Organization:
Argonne National Laboratory, Argonne, Illinois 60439
OSTI ID:
7343420
Journal Information:
Phys. Rev. Lett.; (United States), Journal Name: Phys. Rev. Lett.; (United States) Vol. 37:22; ISSN PRLTA
Country of Publication:
United States
Language:
English