Investigation of SOS processes for fabrication of radiation hardened MIS devices and ICS. Report for 1 May--31 Oct 1974

Technical Report · Tue Oct 01 00:00:00 EDT 1974

OSTI ID:7334094

Williams, R A

This report covers the first six months work on a program to investigate radiation hardening of MIS devices on SOS material. To date the work has been directed toward understanding radiation-induced leakage mechanisms. Experiments were designed to investigate the effects of radiation-induced trapped charge in the sapphire. Suitable devices were fabricated on SOS material using existing masks for a test structure designated MOS-X. Both N-type and P-type starting material covering a range of doping concentration was used, giving both enhancement and deep depletion mode transistors of both N- and P-channel types. In some cases the sapphire was thinned to 5 mils after processing and a back-gate electrode was formed by depositing aluminum on the thinned sapphire substrate. Irradiation of this device only occasionally produced a back channel leakage in the absence of positive drain bias. (GRA)

• Research Organization: Rockwell International Corp., Anaheim, Calif. (USA). Electronics Research Div.
• DOE Contract Number: F19628-74-C-0199
• OSTI ID: 7334094
• Report Number(s): AD-B-002838
• Resource Relation: Other Information: Distribution Limitation now Removed
• Country of Publication: United States
• Language: English

Related Subjects

46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
MIS TRANSISTORS
RADIATION HARDENING
LEAKAGE CURRENT
SAPPHIRE
TRAPPING
ALUMINIUM COMPOUNDS
ALUMINIUM OXIDES
CHALCOGENIDES
CORUNDUM
CURRENTS
ELECTRIC CURRENTS
HARDENING
MINERALS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
TRANSISTORS
440200* - Radiation Effects on Instrument Components
Instruments
or Electronic Systems