Anomalous growth of HfAl/sub 3/ in thin films

Journal Article · Sat Jan 01 04:00:00 EST 1977 · J. Vac. Sci. Technol.; (United States)

DOI:https://doi.org/10.1116/1.569110· OSTI ID:7330954

Lever, R F; Howard, J K; Chu, W K; Smith, P J

Anomalous growth of HfAl/sub 3/ is observed on 400degreeC annealing of evaporated thin-film samples consisting of 900 A aluminum, on 1000 A hafnium, 6000 A aluminum and SiO/sub 2/ substrates. A continuous layer of HfAl/sub 3/ forms at the aluminum--hafnium interface nearer the surface, but not at the deeper interface. The surface HfAl/sub 3/ layer then continues to grow, fed by diffusion of underlying aluminum through the intervening hafnium layer. Needlelike precipitates of HfAl/sub 3/ are formed along the underlying aluminum grain boundaries. Observations are made by nuclear backscattering, Auger electron spectroscopy, and transmission electron microscopy. Similar behavior is observed in Al--Zr--Al layers.

• Research Organization: IBM System Products Division--East Fishkill, Hopewell Junction, New York 12533
• OSTI ID: 7330954
• Journal Information: J. Vac. Sci. Technol.; (United States), Journal Name: J. Vac. Sci. Technol.; (United States) Vol. 14:1; ISSN JVSTA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360101* -- Metals & Alloys-- Preparation & Fabrication
ALLOYS
ALUMINIUM ALLOYS
ALUMINIUM BASE ALLOYS
ANNEALING
AUGER ELECTRON SPECTROSCOPY
BACKSCATTERING
CHALCOGENIDES
CRYSTAL GROWTH
CRYSTAL STRUCTURE
DIFFUSION
ELECTRON SPECTROSCOPY
FILMS
GRAIN BOUNDARIES
GRAIN SIZE
HAFNIUM ALLOYS
HEAT TREATMENTS
HELIUM IONS
INTERFACES
LAYERS
MICROSTRUCTURE
OXIDES
OXYGEN COMPOUNDS
PRECIPITATION
SCATTERING
SEPARATION PROCESSES
SILICON COMPOUNDS
SILICON OXIDES
SIZE
SPECTROSCOPY