Switching measurements on semiconductor-barrier Josephson junctions, isolated and in memory loops

Journal Article · Fri Apr 01 04:00:00 EST 1977 · J. Appl. Phys.; (United States)

DOI:https://doi.org/10.1063/1.323805· OSTI ID:7326240

Lum, W Y; Van Duzer, T

We report here the use of the semiconductor-barrier Josephson junction as the switching component in high-speed digital circuits. We have measured the switching time of a single Pb-Te-Pb junction and the current-transfer time of a memory cell using such a device as the logic switch. The fastest switching time of a rather large junction (0.175 x 0.175 mm/sup 2/) is 67 ps and the current-transfer time of a memory cell with loop inductance of 1.05 x 10/sup -10/ H is 350 ps. These measured values are comparable with those obtained for oxide tunnel junctions similar dimensions.

• Research Organization: Department of Electrical Engineering and Computer Sciences, and the Electronics Research Laboratory, University of California, Berkeley, California 94720
• OSTI ID: 7326240
• Journal Information: J. Appl. Phys.; (United States), Journal Name: J. Appl. Phys.; (United States) Vol. 48:4; ISSN JAPIA
• Country of Publication: United States
• Language: English

Related Subjects

420201* -- Engineering-- Cryogenic Equipment & Devices
71 CLASSICAL AND QUANTUM MECHANICS
GENERAL PHYSICS
DIGITAL CIRCUITS
ELECTRICAL EQUIPMENT
ELECTRONIC CIRCUITS
ELEMENTS
EQUIPMENT
FABRICATION
HYSTERESIS
JOSEPHSON JUNCTIONS
LEAD
LOGIC CIRCUITS
MEMORY DEVICES
METALS
SEMIMETALS
SUPERCONDUCTING JUNCTIONS
SWITCHES
TELLURIUM