Electrical properties of TlBiTe/sub 2/ between 295 and 4. 2k

Technical Report · Fri Jan 01 04:00:00 EST 1971

OSTI ID:7311477

Allgaier, R S; Perl, R; Swiggard, E M

The electrical resistivity rho and the weak-field Hall coefficient R(o) were measured between 295 and 4.2K on polycrystalline TlBiTe2. At 170K, rho and R(o) abruptly changed by factors of 1.2 and 3, respectively. Otherwise, R(o) was approximately constant, with values of +3 and +10 x 10 to the -3rd power cc/C at 295 and 4.2K, and rho decreased steadily with decreasing temperature, showing little or no tendency to approach a constant residual resistance level. The Hall mobilities were about 4 and 1200 sq cm/V-sec at 295 and 4.2K, respectively. Interpretations of the data in terms of a highly extrinsic p-type semiconductor or a semimetal are considered, and their relation to the superconducting transition discovered by Hein and Swiggard is discussed.

• Research Organization: Naval Ordnance Lab., White Oak, MD (USA)
• OSTI ID: 7311477
• Report Number(s): AD-734734
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360104* -- Metals & Alloys-- Physical Properties
656102 -- Solid State Physics-- Superconductivity-- Acoustic
Electronic
Magnetic
Optical
& Thermal Phenomena-- (-1987)
75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ALLOYS
BISMUTH ALLOYS
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELEMENTS
HALL EFFECT
PHYSICAL PROPERTIES
SEMICONDUCTOR MATERIALS
SEMIMETALS
SUPERCONDUCTIVITY
TELLURIUM ALLOYS
THALLIUM ALLOYS
THERMODYNAMIC PROPERTIES
TRANSITION TEMPERATURE