Research on semiconductors at cryogenic temperatures. Final report, 1 July 1985-18 June 1988

Technical Report · Sun Jun 26 04:00:00 EDT 1988

OSTI ID:6599553

Wagner, G R; Janocko, M A

The Hall mobility and magnetoresistance of selectivity doped heterostructures of SixGe1-x/Ge prepared by molecular beam epitaxy (MBE) were studied in the temperature range 1.5 < T < 300K. Either Al or B was used to dope the alloy p-type. Evidence was found in the B-doped samples with x = 0.5 that a 2DHG is formed in the Ge at the heterointerface. The mobility at T = 4.2K in a sample with an undoped alloy spacer layer of 4 nm was micro H = 3200 sq. cm./V-sec and in other samples was found to decrease with spacer layer thickness. Shubnikov-de Haas oscillations were observed at T = 1.5K with the magnetic field normal to the interface, but not with the field parallel to it. The oscillation period yields a surface charge density of 2 x 10 to the 12th/sq. cm. in reasonable agreement with the value of 3 x 10 to the 12th/sq. cm. obtained by Hall measurements.

• Research Organization: Westinghouse Electric Corp., Pittsburgh, PA (USA). Research and Development Center
• OSTI ID: 6599553
• Report Number(s): AD-A-199505/9/XAB
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360603* -- Materials-- Properties
42 ENGINEERING
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BEAMS
CHARGE DENSITY
CRYOGENICS
DIMENSIONS
DOCUMENT TYPES
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
GERMANIUM COMPOUNDS
GERMANIUM SILICIDES
HALL EFFECT
HETEROJUNCTIONS
JUNCTIONS
LAYERS
MAGNETIC FIELDS
MAGNETORESISTANCE
MOBILITY
MOLECULAR BEAMS
PHYSICAL PROPERTIES
PROGRESS REPORT
SEMICONDUCTOR JUNCTIONS
SILICIDES
SILICON COMPOUNDS
SPACERS
TEMPERATURE EFFECTS
THICKNESS