Radiation-induced charge transport and charge buildup in SiO/sub 2/ films at low temperatures
Studies of the temporal, temperature, and electric-field dependences of radiation-induced charge transport have been performed for radiation-hardened SiO/sub 2/ films. At room temperature for high applied fields, nearly all electrons and holes generated in the oxide by a pulse of ionizing radiation (5-keV electrons) drift to the interfaces, whereas at low temperatures only electrons contribute to observed transport for relatively low fields. Below approximately 130/sup 0/K at high fields, field-induced emission of trapped holes occurs, giving rise to collection within seconds of a significant fraction of the total number of holes generated. The present hole transport data are accounted for quite well in terms of a multiple-trapping model with a spread in trap levels ranging from approximately 0.3 to approximately 0.5 eV from the valence band. Comparison with the stochastic hopping transort model is made and that model is found to be less satisfactory in explaining these data. Charge buildup was examined in a Co/sup 60/ environment and it is demonstrated that oxides exhibiting radiation tolerance at room temperature display severe radiation-induced changes at 77/sup 0/K. It is also demonstrated that low-temperature charge buildup problems can be alleviated either by employing an ion-implanted oxide or by applying a relatively high field to the oxide during irradiation.
- Research Organization:
- Northrop Research and Technology Center, Hawthorne, CA
- OSTI ID:
- 7307264
- Journal Information:
- IEEE Trans. Nucl. Sci.; (United States), Journal Name: IEEE Trans. Nucl. Sci.; (United States) Vol. NS-23:6; ISSN IETNA
- Country of Publication:
- United States
- Language:
- English
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BUILDUP
CHALCOGENIDES
CHARGE TRANSPORT
ELECTROMAGNETIC RADIATION
ELECTRONS
ELEMENTARY PARTICLES
FERMIONS
FILMS
GAIN
GAMMA RADIATION
HOLE MOBILITY
HOLES
INTERFACES
IONIZING RADIATIONS
LEPTONS
MOBILITY
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
RADIATION EFFECTS
RADIATIONS
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON OXIDES
TRANSISTORS
TRAPPING
TRAPS