Synthesis of metastable epitaxial zinc-blende-structure AlN by solid-state reaction

Journal Article · Mon May 18 04:00:00 EDT 1992 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.106943· OSTI ID:7306181

Petrov, I; Mojab, E; Powell, R C; Greene, J E ^[1]; Hultman, L; Sundgren, J ^[2]

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1. Materials Science Department, the Coordinated Science Laboratory and the Materials Research Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)
2. Thin Film Division, Department of Physics, Linkoeping University, S-581 83 Linkoeping (Sweden)

Epitaxial metastable zinc-blende-structure {beta}-AlN was synthesized by the solid-state reaction between single-crystal Al(001) and TiN(001) layers grown on MgO(001) by ultrahigh vacuum magnetron sputter deposition. At an annealing temperature {ital T}{sub {ital a}}=600 {degree}C, the interaction proceeded according to the following overall reaction: 4Al+TiN{r arrow}Al{sub 3}Ti+AlN, in which {beta}-AlN was formed pseudomorphically between cubic TiN and tetragonal Al{sub 3}Ti layers. The lattice constant of {beta}-AlN was found to be 0.438 nm, which corresponds to a 3.3% lattice mismatch with the underlying TiN layer.

• DOE Contract Number: AC02-76ER01198
• OSTI ID: 7306181
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 60:20; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360601* -- Other Materials-- Preparation & Manufacture
ALUMINIUM COMPOUNDS
ALUMINIUM NITRIDES
ANNEALING
CRYSTAL GROWTH
CRYSTAL LATTICES
CRYSTAL STRUCTURE
ELECTRON TUBES
ELECTRONIC EQUIPMENT
ENERGY LEVELS
EPITAXY
EQUIPMENT
EXCITED STATES
HEAT TREATMENTS
LATTICE PARAMETERS
MAGNETRONS
METASTABLE STATES
MICROWAVE EQUIPMENT
MICROWAVE TUBES
NITRIDES
NITROGEN COMPOUNDS
PHASE STUDIES
PNICTIDES
SPUTTERING