Heteroepitaxial wurtzite and zinc-blende structure GaN grown by reactive-ion molecular-beam epitaxy: Growth kinetics, microstructure, and properties
- Materials Science Department, the Coordinated Science Laboratory, and the Materials Research Laboratory, University of Illinois, 1101 West Springfield Avenue, Urbana, Illinois 61801 (United States)
Reactive-ion molecular-beam epitaxy has been used to grow epitaxial hexagonal-structure [alpha]-GaN on Al[sub 2]O[sub 3](0001) and Al[sub 2]O[sub 3](01[bar 1]2) substrates and metastable zinc-blende-structure [beta]-GaN on MgO(001) under the following conditions: growth temperature [ital T][sub [ital s]]=450--800 [degree]C; incident N[sup +][sub 2]/Ga flux ratio [ital J][sub N[sup +][sub 2]]/[ital J][sub Ga]=1--5; and N[sup +][sub 2] kinetic energy [ital E][sub N[sup +][sub 2]]=35--90 eV. The surface structure of the [alpha]-GaN films was (1[times]1), with an [approx]3% contraction in the in-plane lattice constant for films grown on Al[sub 2]O[sub 3](0001), while the [beta]-GaN films exhibited a 90[degree]-rotated two-domain (4[times]1) reconstruction. Using a combination of [ital in] [ital situ] reflection high-energy electron diffraction, double-crystal x-ray diffraction, and cross-sectional transmission electron microscopy, the film/substrate epitaxial relationships were determined to be: (0001)[sub GaN][parallel] (0001)[sub Al[sub 2]O[sub 3]] with [2[bar 1][bar 1]0][sub GaN][parallel][1[bar 1]00][sub Al[sub 2]O[sub 3]] and [1[bar 1]00][sub GaN][parallel][1[bar 2]10][sub Al[sub 2]O[sub 3]], (2[bar 1][bar 1]0)[sub GaN][parallel](01[bar 1]2)[sub Al[sub 2]O[sub 3]] with [0001][sub GaN][parallel][0[bar 1]11][sub Al[sub 2]O[sub 3]] and [0[bar 1]10][sub GaN][parallel][2[bar 1][bar 1]0][sub Al[sub 2]O[sub 3]], and (001)[sub GaN][parallel](001)[sub MgO] with [001][sub GaN][parallel][001][sub MgO].
- DOE Contract Number:
- AC02-76ER01198
- OSTI ID:
- 6837588
- Journal Information:
- Journal of Applied Physics; (United States), Journal Name: Journal of Applied Physics; (United States) Vol. 73:1; ISSN JAPIAU; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360602* -- Other Materials-- Structure & Phase Studies
CHARGED PARTICLES
COHERENT SCATTERING
CRYSTAL DEFECTS
CRYSTAL STRUCTURE
DIFFRACTION
ELECTRIC CONDUCTIVITY
ELECTRICAL PROPERTIES
ELECTRON MICROSCOPY
EPITAXY
FILMS
GALLIUM COMPOUNDS
GALLIUM NITRIDES
GROWTH
IONS
MICROSCOPY
MICROSTRUCTURE
MOLECULAR BEAM EPITAXY
NITRIDES
NITROGEN COMPOUNDS
PHYSICAL PROPERTIES
PHYSICAL RADIATION EFFECTS
PNICTIDES
RADIATION EFFECTS
SCATTERING
THIN FILMS
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION