Preparation of wurtzitic AlN thin films with a novel crystallographic alignment on MgO substrates by molecular-beam epitaxy
- Materials and Engineering Sciences Center, Sandia National Laboratories, P.O. Box 969, Livermore, California 94551 (United States)
Thin films of wurtzitic AlN have been deposited by molecular-beam epitaxy onto (001) oriented MgO substrates. The films are epitactic and align with the (2{bar 1}{bar 1}0){sub AlN}{parallel}(220){sub MgO} and the [01{bar 1}1]{sub AlN}{parallel}[001]{sub MgO}, as evidenced by transmission electron microscopy. This configuration, which matches a close-packed direction of the film and substrate, allows for growth of two symmetrically equivalent orientation variants of the AlN film. These variants are distinguished by a 90{degree} rotation about the [01{bar 1}1]{sub AlN} direction that is normal to the substrate surface. Each variant also aligns the (0{bar 1}12){sub AlN}{parallel}(2{bar 2}0){sub MgO} and the (1{bar 1}01){sub AlN} to within 5{degree} of being parallel to the (200){sub MgO}. The microstructure of the AlN films and origins of these novel alignments are discussed. {copyright} {ital 1998 Materials Research Society.}
- Research Organization:
- Sandia National Laboratory
- DOE Contract Number:
- AC04-94AL85000
- OSTI ID:
- 638753
- Journal Information:
- Journal of Materials Research, Journal Name: Journal of Materials Research Journal Issue: 6 Vol. 13; ISSN JMREEE; ISSN 0884-2914
- Country of Publication:
- United States
- Language:
- English
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