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Title: Broad area, intense electron beam source for high resolution, high throughput semiconductor lithography

Journal Article · · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States)
DOI:https://doi.org/10.1116/1.586513· OSTI ID:7303030
; ; ; ; ;  [1];  [2]
  1. Univ. of Southern California, Los Angeles, CA (United States)
  2. Univ. of Erlangen (Germany)

Electron beam lithography using a robust, high current density (> 10 A/cm[sup 2]), high brightness (> 10[sup 10] A/m[sup 2] rad [sup 2]), broad area (> 1 cm diam) electron beam source is reported. The electron beam is produced during the hollow cathode discharge phase of a backlighted thyratron. The generated beam propagates in soft vacuum (< 200 mTorr) and is collimated using cylindrical dielectric waveguides, resulting in uniform intensity over an area exceeding approximately 1 cm[sup 2], along with a small divergence angle (< 1.5[degrees]). Masked lithography for replication of fine line structures has been achieved, demonstrating the potential for a high throughput (approximately 30-40 wafers/h), high resolution (< 0.25 [mu]m) lithography system that is competitive with more complex x-ray and short wavelength optical systems. 31 refs., 5 figs.

DOE Contract Number:
W-7405-ENG-48
OSTI ID:
7303030
Journal Information:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena; (United States), Vol. 11:5; ISSN 0734-211X
Country of Publication:
United States
Language:
English