Mask blanks for extreme ultraviolet lithography: Ion beam sputter deposition of low defect density Mo/Si multilayers

Journal Article · Fri Oct 31 23:00:00 EST 1997 · Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena

DOI:https://doi.org/10.1116/1.589665· OSTI ID:550469

Kearney, P A; Moore, C E; Tan, S I; Vernon, S P; Levesque, R A ^[1]

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1. Lawrence Livermore National Laboratory, P.O. Box 808, Livermore, California 94551 (United States)

We report on the growth of low defect density Mo/Si multilayer (ML) coatings. The coatings were grown in a deposition system specifically designed for extreme ultraviolet lithography mask blank fabrication. Complete, 81 layer, high reflectance Mo/Si ML coatings were deposited on 150 mm diam (100) oriented Si wafer substrates using ion beam sputter deposition. Process added defect densities correspond to 2{times}10{sup {minus}2}/cm{sup {minus}2} larger than 0.13 {mu}m as measured by optical scattering. This represents a reduction in defect density of Mo/Si ML coatings by a factor of 10{sup 5}. {copyright} {ital 1997 American Vacuum Society.}

• Research Organization: Lawrence Livermore National Laboratory
• DOE Contract Number: W-7405-ENG-48
• OSTI ID: 550469
• Report Number(s): CONF-9705218--
• Journal Information: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Journal Name: Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena Journal Issue: 6 Vol. 15; ISSN 0734-211X; ISSN JVTBD9
• Country of Publication: United States
• Language: English

Related Subjects

44 INSTRUMENTATION
INCLUDING NUCLEAR AND PARTICLE DETECTORS
COATINGS
DEPOSITION
EXTREME ULTRAVIOLET RADIATION
INTEGRATED CIRCUITS
MASKING
MOLYBDENUM
RESPIRATORS
SILICON
THIN FILMS
X-RAY EQUIPMENT