New insight into the structure and growth of CaF sub 2 /Si(111)

Journal Article · Mon Apr 27 04:00:00 EDT 1992 · Applied Physics Letters; (United States)

DOI:https://doi.org/10.1063/1.107092· OSTI ID:7292339

Lucas, C A; Loretto, D ^[1]

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1. Center for Advanced Materials, Lawrence Berkeley Laboratory, University of California, Berkeley, California 94720 (United States)

We have used transmission electron microscopy and x-ray crystal truncation rod measurements to investigate thin ({lt}50 A) CaF{sub 2} films grown on Si(111) substrates by molecular beam epitaxy. The results indicate that CaF{sub 2}/Si can be structurally as perfect as NiSi{sub 2}/Si and CoSi{sub 2}/Si, and that a reconstructed layer is present at the CaF{sub 2}/Si(111) interface.

• DOE Contract Number: AC03-76SF00098
• OSTI ID: 7292339
• Journal Information: Applied Physics Letters; (United States), Journal Name: Applied Physics Letters; (United States) Vol. 60:17; ISSN APPLA; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360606* -- Other Materials-- Physical Properties-- (1992-)
ALKALINE EARTH METAL COMPOUNDS
CALCIUM COMPOUNDS
CALCIUM FLUORIDES
CALCIUM HALIDES
COHERENT SCATTERING
DIFFRACTION
ELECTRON MICROSCOPY
ELEMENTS
EPITAXY
FLUORIDES
FLUORINE COMPOUNDS
HALIDES
HALOGEN COMPOUNDS
INTERFACES
MICROSCOPY
MOLECULAR BEAM EPITAXY
MORPHOLOGY
SCATTERING
SEMIMETALS
SILICON
TRANSMISSION ELECTRON MICROSCOPY
X-RAY DIFFRACTION