Universal crossover in variable range hopping with Coulomb interactions
- Raymond and Bererly Sackler Faculty of Exact Sciences, School of Physics and Astronomy, Tel Aviv University, 69978 Ramat Aviv (Israel)
- Department of Physics, City College of the City University of New York, New York, New York 10031 (United States)
Using dimensional analysis, we show that the variable-range-hopping resistivity {rho} of disordered systems with Coulomb interactions obeys the scaling form ln({rho}/{rho}{sub 0})={ital Af}({ital T}/{ital T}{sub {ital x}}), where {ital f}({ital x}) is a universal function and {ital A} and {ital T}{sub {ital x}} are sample-dependent constants. A simple heuristic calculation in three dimensions yields an explicit form, for {ital f}({ital x}), which exhibits a smooth-crossover from the Mott ({ital f}{proportional to}{ital x}{sup {minus}1/4}) to the Efros-Shklovskii ({ital f}{proportional to}{ital x}{sup {minus}1/2}) behaviors. Data on five different samples of compensated {ital n}-type CdSe are shown to collapse onto this single function.
- DOE Contract Number:
- FG02-84ER45153
- OSTI ID:
- 7292295
- Journal Information:
- Physical Review Letters; (United States), Journal Name: Physical Review Letters; (United States) Vol. 68:26; ISSN PRLTA; ISSN 0031-9007
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
360606* -- Other Materials-- Physical Properties-- (1992-)
CADMIUM COMPOUNDS
CADMIUM SELENIDES
CHALCOGENIDES
COULOMB FIELD
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
ELECTRIC FIELDS
ELECTRICAL PROPERTIES
MATERIALS
N-TYPE CONDUCTORS
PHYSICAL PROPERTIES
SCALING LAWS
SELENIDES
SELENIUM COMPOUNDS
SEMICONDUCTOR MATERIALS
TEMPERATURE DEPENDENCE