Low temperature charge carrier hopping transport mechanism in vanadium oxide thin films grown using pulsed dc sputtering
- Materials Research Institute, The Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
- Department of Engineering Sciences, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
- Department of Electrical Engineering, Pennsylvania State University, University Park, Pennsylvania 16802 (United States)
Low temperature charge transport in vanadium oxide (VO{sub x}) thin films processed using pulsed dc sputtering is investigated to understand the correlation between the processing conditions and electrical properties. It is identified that the temperature dependent resistivity {rho}(T) of the VO{sub x} thin films is dominated by a Efros-Shklovskii variable range hopping mechanism [Efros and Shklovskii, J. Phys. C 8, L49 (1975)]. A detailed analysis in terms of charge hopping parameters in the low temperature regime is used to correlate film properties with the pulsed dc sputtering conditions.
- OSTI ID:
- 21294133
- Journal Information:
- Applied Physics Letters, Vol. 94, Issue 22; Other Information: DOI: 10.1063/1.3139864; (c) 2009 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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