Charge yield and dose effects in MOS capacitors at 80/sup 0/K. Technical report
The response of metal-oxide semiconductor capacitors to short-pulse high-energy electron irradiation was measured at 80/sup 0/K. It was confirmed that radiation-generated holes are almost totally retained in the SiO/sub 2/ layer regardless of oxide processing; this retention was exploited to determine carrier yield as a function of applied electric field. Evidence was found that the holes undergo an initial displacement under an applied field immediately following carrier generation (9.5 nm at 1,000,000 V/cm). Samples were subjected to pulsed irradiation at 80/sup 0/K to accumulated doses above 1,000,000 rads (SiO/sub 2/) and mechanisms which limit hole buildup above 50,000 rads (SiO/sub 2/) were explored. Electron-hole recombination in a low field region of the SiO/sub 2/ was identified as an important process and was modeled. Other mechanisms discussed include electron injection, field- and temperature-activated hole transport, applied field collapse, and dielectric breakdown.
- Research Organization:
- Harry Diamond Labs., Washington, DC (USA)
- OSTI ID:
- 7289374
- Report Number(s):
- AD-A-039537; HDL-TR-1806
- Country of Publication:
- United States
- Language:
- English
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46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
BREAKDOWN
CAPACITORS
CHALCOGENIDES
ELECTRICAL EQUIPMENT
ELECTRONS
ELEMENTARY PARTICLES
EQUIPMENT
FERMIONS
HOLES
IRRADIATION
LEPTONS
MOS TRANSISTORS
OXIDES
OXYGEN COMPOUNDS
PHYSICAL RADIATION EFFECTS
PULSED IRRADIATION
RADIATION EFFECTS
RECOMBINATION
SEMICONDUCTOR DEVICES
SILICON COMPOUNDS
SILICON OXIDES
TRANSISTORS