Comparison of interface-state buildup in MOS capacitors subjected to penetrating and nonpenetrating radiation
Metal-SiO₂-Si capacitors under positive bias were subjected to penetrating ⁶⁰Co $gamma$ and nonpenetrating 10.2-eV uv radiation. High- frequency 1-MHz and quasistatic C-V curves were recorded before and after irradiation, and interface-state densities over the Si band gap were calculated from these curves by using the Terman, Berglund, and Castagne techniques. The nature and magnitude of the buildup of interface states were similar for both types of irradiation, demonstrating that the buildup is not related to the direct interaction of radiation at the interface or a structural modification of the SiO₂ layer, but to the production of electron-hole pairs in the oxide and the subsequent transport of holes to the oxide-semiconductor interface. The buildup of interface states under irradiation saturated at approx.5 x 10⁵ rad (SiO₂). (AIP)
- Research Organization:
- Harry Diamond Laboratories, Adelphi, Maryland 20783
- Sponsoring Organization:
- USDOE
- NSA Number:
- NSA-33-030033
- OSTI ID:
- 4041902
- Journal Information:
- Applied Physics Letters, Journal Name: Applied Physics Letters Journal Issue: 10 Vol. 28; ISSN APPLAB; ISSN 0003-6951
- Publisher:
- American Institute of Physics (AIP)
- Country of Publication:
- United States
- Language:
- English
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