Radiation-induced displacement damage in silicon carbide blue light-emitting diodes

Journal Article · Mon Jun 01 04:00:00 EDT 1992 · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)

DOI:https://doi.org/10.1109/23.277531· OSTI ID:7289093

Braeunig, D; Fritsch, D; Lehmann, B ^[1]; Barry, A L ^[2]

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1. Hahn-Meitner-Inst. Berlin GmbH, Berlin (DE)
2. Communications Research Center, Ottawa (CA)

In this paper, the effect of electron irradiation on the minority carrier lifetime of silicon carbide (SiC) light-emitting diodes is evaluated. Although the electron threshold energy for displacement damage is lower than that for GaAs by a factor of 2.5 because of the smaller mass of the carbon atom, at energies above 0.5 MeV the damage constant for SiC is more than three orders of magnitude lower than for GaAs, indicating greatly superior performance in most radiation environments. Preliminary annealing studies indicate significantly different recovery behavior for damage by electrons of different energies.

• OSTI ID: 7289093
• Journal Information: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States), Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Vol. 39:3; ISSN 0018-9499; ISSN IETNA
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
360206 -- Ceramics
Cermets
& Refractories-- Radiation Effects
440200* -- Radiation Effects on Instrument Components
Instruments
or Electronic Systems
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY
ANNEALING
ARSENIC COMPOUNDS
ARSENIDES
BEAMS
CARBIDES
CARBON COMPOUNDS
ELECTRON BEAMS
ENERGY
GALLIUM ARSENIDES
GALLIUM COMPOUNDS
HEAT TREATMENTS
LEPTON BEAMS
LIGHT EMITTING DIODES
PARTICLE BEAMS
PERFORMANCE
PNICTIDES
RADIATION EFFECTS
SEMICONDUCTOR DEVICES
SEMICONDUCTOR DIODES
SILICON CARBIDES
SILICON COMPOUNDS
THRESHOLD ENERGY