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Energy dependence of electron damage and displacement threshold energy in 6H silicon carbide

Conference · · IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States)
OSTI ID:5708020
 [1]; ; ;  [2]
  1. Communication Research Center, Ottawa (CA)
  2. Hahn-Meitner-Inst. Berlin GmbH, Berlin (DE)
This paper reports on the frequency response of silicon carbide (SiC) light-emitting diodes that have been used to measure the energy dependence of displacement damage produced in 6H SiC by energetic electrons. The minimum electron energy required to produce displacement damage was determined to be 108 {plus minus} 7 keV, corresponding to an atomic displacement threshold energy, E{sub d}, of 21.8 {plus minus} 1.5 eV for the carbon atom. No evidence was seen of persistent damage due to displacement of silicon atoms. For electrons of energies greater than 0.5 MeV, the damage constant for lifetime degradation in SiC is lower than that for GaAs by more than three orders of magnitude, indicating a greatly superior resistance of SiC to displacement damage in most radiation environments.
OSTI ID:
5708020
Report Number(s):
CONF-910751--
Conference Information:
Journal Name: IEEE Transactions on Nuclear Science (Institute of Electrical and Electronics Engineers); (United States) Journal Volume: 38:6
Country of Publication:
United States
Language:
English